DatasheetsPDF.com

2SC6076

Part Number	2SC6076
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low ...
Datasheet	2SC6076 PDF File

Overview

isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=0.
5V(Max) @IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ·Power Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 3.
0 A ICM Collector Current-Peak 5.
0 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature ...

Similar Datasheet

2SC6000 Silicon NPN Transistor - Toshiba Semiconductor
2SC6010 Silicon NPN Transistor - Toshiba
2SC6011 NPN Transistor - INCHANGE
2SC6011 Audio Amplification Transistor - Allegro MicroSystems
2SC6011 Audio Amplification Transistor - Sanken
2SC6011A PNP PowerTransistor - Sanken
2SC6011A Audio Amplification Transistor - Allegro MicroSystems
2SC6011A NPN Transistor - INCHANGE
2SC6012 Silicon NPN triple diffusion Power Transistor - Panasonic Semiconductor
2SC6013 NPN Epitaxial Planar Silicon Transistor - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)