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2SC6076

Toshiba Semiconductor
Part Number 2SC6076
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Sep 10, 2008
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File 2SC6076 PDF File

2SC6076
2SC6076

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.
5 V (max) ( IC = 1A) High-speed switching: tstg = 0.
4 μs (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Tc = 25℃ VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 160 V 160 V 80 V 9 V 3 A 5 A 1.
5 A 10 W 150 °C −55 to 150 °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight:0.
36g (typ.
) Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significant...


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