2SC6079
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6079
Power Amplifier Applications Power Switching Applications
Low collector saturation
voltage: VCE (sat) = 0.
5 V (max)(IC = 1A) High-speed switching: tstg = 0.
4 μs (typ)
com
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base
voltage Collector-emitter
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 2.
0 4.
0 1.
5 1 150 −55~150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR 3 : EMITTER
JEDEC JEITA TOSHIBA...