isc Silicon NPN Power Transistor
2SD557
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 140V(Min.
) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
140
V
VCEO Collector-Emitter
Voltage
140
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
20
A
120
W
150
℃
Tstg
Storage Temperature
-55~150 ...