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2SD555

SavantIC

Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD555 DESCRIPTION ·With TO-3 package ·Hi...


SavantIC

2SD555

File Download Download 2SD555 Datasheet


Description
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD555 DESCRIPTION ·With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS speed ,high current ,high power applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION www.DataSheet4U.com ·For high Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 5 10 200 150 -55~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.46 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=10A; IB=2A IC=5A; IB=0.5A VCB=250V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=10V 40 MIN 200 5 2SD555 SYMBOL V(BR)CEO V(BR)EBO www.DataSheet4U.com TYP. MAX UNIT V V VCEsat-1 VCEs...




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