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2SD556

Part Number	2SD556
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD556 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SD556 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD556 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Wide Area of Safe Operation ·High Power ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 120 W 175 ℃ Tstg St...

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