2SJ293

2SJ293 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ293 Absolute M...