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2SJ296

Hitachi
Part Number 2SJ296
Manufacturer Hitachi
Description Silicon P-Channel MOSFET
Published Nov 22, 2007
Detailed Description www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switchin...
Datasheet PDF File 2SJ296 PDF File

2SJ296
2SJ296


Overview
www.
DataSheet4U.
com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1.
Gate 2.
Drain 3.
Source 4.
Drain www.
DataSheet4U.
com 2SJ296(L), 2SJ296(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –15 –60 –15 –15 Unit V V A A A A mJ W °C °C EAR* Tch 3 19 2 Pch* 50 150 –55 to +150 Tstg 2 www.
DataSheet4U.
com 2SJ296(L), 2SJ296(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr –60 ±20 — — –1.
0 — — 8 — — — — — — — — — Typ — — — — — 0.
075 0.
09 12 1450 670 240 20 95 230 160 –1.
5 160 Max — — ±10 –250 –2.
25 0.
095 0.
15 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = –15 A, VGS = 0 IF = –15 A, VGS = 0, diF/dt = 50 A/µs ID = –8 A, VGS = –10 V, RL = 3.
75 Ω Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –8 A, VGS = –10 V* ID = –8 A, VGS = –4 V* VDS = –10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...


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