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2SJ297L

Hitachi
Part Number 2SJ297L
Manufacturer Hitachi
Description Silicon P-Channel MOS FET
Published Jan 25, 2015
Detailed Description 2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • Hi...
Datasheet PDF File 2SJ297L PDF File

2SJ297L
2SJ297L


Overview
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1.
Gate 2.
Drain 3.
Source 4.
Drain November 1996 2SJ297(L), 2SJ297(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings –60 ±20 –20 –80 –20 –20 34 60 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SJ297(L), 2SJ297(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS –60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — –1.
0 — — Forward transfer admittance Input capacitance |yfs| Ciss 10 — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage td(on) tr td(off) tf VDF — — — — — Body to drain diode reverse recovery time trr — Note 1.
Pulse test Typ Max Unit ——V ——V — — — 0.
05 0.
07 16 2200 1000 300 25 130 320 210 –1.
1 ±10 –250 –2.
25 0.
065 0.
095 — — — — — — — — — µA µA V Ω Ω S pF pF pF ns ns ns ns V 160 — ns Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V*1 ID = –10 A, VGS = –4 V*1 ID = –10 A, VDS = –10 V*1 VDS = –10 V, VGS = 0, f = 1 MHz ID ...


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