SHEN ZHEN FINE MADE ELECTRONICS GROUP CO.
, LTD.
30H10K(:S&CIC1689)
N-Channel Trench Power
MOSFET
N-C hannel Trench Power
MOSFET
General Description
The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 5V.
This device is suitable for use as a wide variety of applications.
Features
● VDS = 30V,ID =100A RDS(ON) 4.
2mΩ @ VGS =10V RDS(ON) 7mΩ @ VGS =5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● PWM applications ● Load switch
● Power management
100% UIS TESTED! 100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
De...