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30H10K

ROUM
Part Number 30H10K
Manufacturer ROUM
Description 100A 30V N-channel Enhancement Mode Power MOSFET
Published Jan 16, 2019
Detailed Description 30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used a...
Datasheet PDF File 30H10K PDF File

30H10K
30H10K


Overview
30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.
Which accords with the RoHS standard.
2 Features ● Fast Switching ● Low ON Resistance(Rdson≤5.
5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● Inverter management system ● Electric Tools ● Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.
1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)(Note 1) Single Pulse Avalanche Energy(Note 5) Total Dissipation Ta=25℃ TC=25℃ Junction Temperature storage Temperature Maximum ...


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