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30H10K

TGD
Part Number 30H10K
Manufacturer TGD
Description N-Channel Enhancement Mode Power MOSFET
Published Jan 16, 2019
Detailed Description Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced tr...
Datasheet PDF File 30H10K PDF File

30H10K
30H10K

Overview
Taiwan Goodark Technology Co.
,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
TGD30H10K General Features ● VDS =30V,ID =100A RDS(ON) <5.
5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package 30H10K 30H10K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless...


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