July 2001
AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
Features
VDS (V) = -30V ID = -5A RDS(ON) 49mΩ (VGS = 10V) RDS(ON) 64mΩ (VGS = 4.
5V) RDS(ON) 120mΩ (VGS = 2.
5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
5V@1A
D K
A A S G
1 2 3 4
8 7 6 5
K K D D G
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S
A
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage Gate-Source
Voltage TA=25°C Continuous Drain CurrentA Pulsed D...