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AO4708

Alpha & Omega Semiconductors
Part Number AO4708
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Jan 9, 2016
Detailed Description AO4708 30V N-Channel MOSFET SRFET TM General Description SRFET TM AO4708 uses advanced trench technology with a monolit...
Datasheet PDF File AO4708 PDF File

AO4708
AO4708

Overview
AO4708 30V N-Channel MOSFET SRFET TM General Description SRFET TM AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 8.
7mΩ (VGS = 10V) RDS(ON) < 10.
5mΩ (VGS = 4.
5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.
3mH B IDSM IDM IAR EAR Power DissipationA TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 15 12 80 25 94 3.
1 2.
0 -55 to 150 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Units V V A A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4708 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250uA, VGS=0V VDS=24V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=15A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.
5V, ID=14A VDS=5V, ID=15A IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current TJ=125°C TJ=125°C 30 1.
4 80 0.
1 20 0.
1 1.
8 2.
4 7.
2 10.
5 8.
6 85 0.
39 8.
7 13.
1 10.
5 0.
5 5.
5 V mA µA V A mΩ mΩ S V A DYNAMI...


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