DatasheetsPDF.com

AO4707

Alpha & Omega Semiconductors
Part Number AO4707
Manufacturer Alpha & Omega Semiconductors
Description P-Channel Enhancement Mode Field Effect Transistor
Published Jun 7, 2007
Detailed Description AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4707 uses advanc...
Datasheet PDF File AO4707 PDF File

AO4707
AO4707

Overview
AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4707 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters.
Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications).
AO8820L is a Green Product ordering option.
AO8820 and AO8820L are electrically identical.
A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G S A Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.
5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.
52V@3A D K SOIC-8 www.
DataSheet4U.
com Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET -30 ±20 -8 -6.
6 -40 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A C B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 3 2 -55 to 150 Typ 24 54 21 36 67 25 30 5 3.
5 30 3 2 -55 to 150 Max 40 75 30 40 75 30 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State °C/W Alpha & Omega Semiconductor, Ltd.
AO4707 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.
5V, ID=-5A Forward Transconductance VDS=-5V, I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)