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AOP608 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP608 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary
MOSFETs may be used in H-bridge, Inverters and other applications.
Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications).
AOP608L is a Green Product ordering option.
AOP608 and AOP608L are electrically identical.
Features
n-channel VDS (V) = 40V ID = 6.
3A (VGS=10V) RDS(ON) 33m Ω (VGS=10V) 46m Ω (VGS=4.
5V) p-channel -40V -5.
5A (VGS = -10V) RDS(ON) 45mΩ (VGS = -10V) 63mΩ (VGS = -4.
5V)
D2
D1
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2 S2
G1 ...