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AOP609

Alpha & Omega Semiconductors
Part Number AOP609
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Feb 18, 2010
Detailed Description www.DataSheet4U.com AOP609 Complementary Enhancement Mode Field Effect Transistor General Description The AOP609 uses a...
Datasheet PDF File AOP609 PDF File

AOP609
AOP609

Overview
www.
DataSheet4U.
com AOP609 Complementary Enhancement Mode Field Effect Transistor General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications).
AOP609L is a Green Product ordering option.
AOP609 and AOP609L are electrically identical.
Features n-channel p-channel -60V VDS (V) = 60V ID = 4.
7A (VGS=10V) -3.
5A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115mΩ (VGS =-10V) < 75m Ω (VGS=4.
5V) < 140mΩ (VGS =-4.
5V) ESD Rating: 1500V HBM 3000V HMB D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 ±20 -3.
5 -2.
9 -20 2.
5 1.
6 -55 to 150 Typ 37 74 28 35 73 32 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD ±20 4.
7 3.
8 20 2.
5 1.
6 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch W °C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Max Units 50 °C/W 90 °C/W 40 °C/W 50 90 40 °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOP609 www.
DataSheet4U.
com N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistan...


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