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AOP605L

Alpha & Omega Semiconductors
Part Number AOP605L
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published May 9, 2007
Detailed Description AOP605 Complementary Enhancement Mode Field Effect Transistor General Description The AOP605/L uses advanced trench tec...
Datasheet PDF File AOP605L PDF File

AOP605L
AOP605L

Overview
AOP605 Complementary Enhancement Mode Field Effect Transistor General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
AOP605 and AOP605L are electrically identical.
-RoHS Compliant -AOP605L is Halogen Free Features n-channel VDS (V) = 30V ID = 7.
5A (VGS = 10V) p-channel -30V -6.
6A (VGS = -10V) RDS(ON) < 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V) < 43mΩ (VGS = 4.
5V) < 58mΩ (VGS = -4.
5V) PDIP8 Top View Bottom View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 PDIP-8 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 7.
5 Current A TA=70°C ID 6 Pulsed Drain Current B IDM 30 Power Dissipation TA=25°C TA=70°C PD 2.
5 1.
6 Junction and Storage Temperature Ran...


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