AP3310GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ 2.
5V Gate Drive Capability
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P-CHANNEL ENHANCEMENT MODE POWER
MOSFET D
BVDSS RDS(ON) ID
-20V 150mΩ -10A
▼ Fast Switching Characteristic
G S
Description
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
This device is suited for low
voltage and lower power applications.
G D S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Dr...