AP3310H/J
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ 2.
5V Gate Drive Capability
com
P-CHANNEL ENHANCEMENT MODE POWER
MOSFET D
BVDSS RDS(ON) ID
-20V 150mΩ -10A
G S
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness.
This device is suited for low
voltage and battery power applications.
G D S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Ra...