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AP3310H

Advanced Power Electronics
Part Number AP3310H
Manufacturer Advanced Power Electronics
Description P-Channel MOSFET
Published Jan 12, 2009
Detailed Description AP3310H/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability www.DataSheet4U.com ...
Datasheet PDF File AP3310H PDF File

AP3310H
AP3310H

Overview
AP3310H/J Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ 2.
5V Gate Drive Capability www.
DataSheet4U.
com P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -20V 150mΩ -10A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness.
This device is suited for low voltage and battery power applications.
G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 ± 12 -10 -6.
2 -24 25 0.
01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 5.
0 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 201225023 AP3310H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min.
Typ.
Max.
Units -20 -0.
5 -0.
1 - V V/℃ Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance VGS=-4.
5V, ID=-2.
8A VGS=-2.
5V, ID=-2.
0A 4.
4 6 1.
5 0.
6 25 60 70 60 300 180 60 150 mΩ 250 mΩ -1 -25 V S uA uA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.
8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 12V ID=-2.
8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6Ω,VGS=-5V RD=6Ω VGS=0V VDS=-6V f=1.
0MHz Gate-Source Leakag...


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