Vertical N-channel MOSFET
www.DataSheet4U.com BLV108 N MOSFET : : N VDMOS,, : VDSS VGSS ID PD Tj, TSDG (T=25℃ (T=25℃) 200 + 20 300 1 -55 to +150 V V mA W o Power Dissipation for Dual Operation C Rth j-a Thermal Resistance, Junction to Ambient TA=25oC o 125 K/W 200 V BVDSS I DSS I GSS VGS = 0V , I D = 10uA VDS = 160V , VGS = 0V VGS = ±2...
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