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BLV100

Part Number	BLV100
Manufacturer	NXP
Description	UHF power transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors...
Datasheet	BLV100 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors Product speciﬁcation UHF power transistor FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
1 2 4 6 MBB012 BLV100 PIN CONFIGURATION halfpage c handbook, halfpage DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band.
The transistor has a 6-lead flange envelope with a ceramic cap.
All leads are isolated from the flange.
PINN...

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