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BLV103

Part Number	BLV103
Manufacturer	NXP
Description	UHF power transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors...
Datasheet	BLV103 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors Product speciﬁcation UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap.
It is intended for common emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band.
All leads are isolated from the mounting base.
PINNING - SOT171 k, halfpage BLV103 QUICK REFERENCE DATA ...

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