Part Number
|
BLV25 |
Manufacturer
|
NXP |
Description
|
VHF power transistor |
Published
|
Mar 23, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV25 VHF power transistor
Product specification August 1986
Philips Semiconductors...
|
Datasheet
|
BLV25
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV25 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.
h.
f.
-f.
m.
broadcast transmitters.
FEATURES • internally matched input for wideband operation and high power gain; • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; • gold-metallization ensures excellent reliability.
The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C in an unneutralized common...
Similar Datasheet