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BLV21

NXP
Part Number BLV21
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLV21 VHF power transistor Product specification August 1986 Philips Semiconductors...
Datasheet PDF File BLV21 PDF File

BLV21
BLV21

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLV21 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.
f.
and v.
h.
f.
transmitters with a nominal supply voltage of 28 V.
The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.
It has a 3/8" flange envelope with a ceramic cap.
All leads are isolated from the flange.
BLV21 QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C in an unneautralized common-emitter class-B circuit MODE OF OPERATION c.
w.
VCE V 28 f MHz 175 PL W 15 Gp dB > 10 η % > 65 zI Ω 1,4 + j1,85 YL mS 33 − j27,5 PIN CONFIGURATION handbook, halfpage PINNING PIN 1 1 4 DESCRIPTION collector emitter base emitter 2 3 4 2 3 MSB057 Fig.
1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic.
The device is entirely safe provided that the BeO disc is not damaged.
August 1986 2 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.
F.
power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max.
max.
max.
max.
max.
max.
max.
BLV21 65 V 36 V 4 V 1,75 A 5,0 A 36 W 200 °C −65 to + 150 °C handbook, halfpage 2 MGP283 handbook, halfpage 60 MGP284 IC (A) 1.
5 Tmb = 25 °C Ptot (W) 40 ΙΙΙ ΙΙ derate by 0.
2 W/K 1 Th = 70 °C 20 0.
5 Ι 0.
16 W/K 0 10 20 30 VCE (V) 40 0 0 50 Th (°C) 100 I Continuous d.
c.
operation II Continuous r.
f.
operation III Short-time operation during mismatch Fig.
2 D.
C.
SOAR.
Fig.
3 R.
F.
power dissipati...


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