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Part Number
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BSH112 |
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Manufacturer
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NXP |
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Description
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N-channel enhancement mode field-effect transistor |
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Published
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Mar 23, 2005 |
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Detailed Description
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BSH112
N-channel enhancement mode field-effect transistor
Rev. 01 — 25 August 2000
M3D088
Product specification
1. Descr...
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Datasheet
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BSH112
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Overview
BSH112
N-channel enhancement mode field-effect transistor
Rev.
01 — 25 August 2000
M3D088
Product specification
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: BSH112 in SOT23.
2.
Features
s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes.
3.
Applications
c c
s Relay driver s High speed line driver s Logic level translator.
4.
Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g)
3
Simplified outline
Symbol
source (s) drain (d)
g
d
03ab44 03ab60
1
2
...
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