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BSH111BK

nexperia
Part Number BSH111BK
Manufacturer nexperia
Description N-Channel MOSFET
Published Jul 5, 2019
Detailed Description BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancemen...
Datasheet PDF File BSH111BK PDF File

BSH111BK
BSH111BK

Overview
BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 3 kV HBM 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Symbol VDS VGS ID Quick reference data Parameter drain-source voltage gate-source voltage drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; Tsp = 25 °C VGS = 4.
5 V; ID = 200 mA; Tj = 25 °C [1] Min Typ Max Unit - - 55 V -10 - 10 V - - 210 mA - - 335 mA - 2.
3 4 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for...


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