DatasheetsPDF.com

BSH111

NXP Semiconductors
Part Number BSH111
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
Published Aug 24, 2014
Detailed Description BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 M3D088 Product data 1. Description N-...
Datasheet PDF File BSH111 PDF File

BSH111
BSH111

Overview
BSH111 N-channel enhancement mode field-effect transistor Rev.
02 — 26 April 2002 M3D088 Product data 1.
Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability: BSH111 in SOT23.
2.
Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package.
3.
Applications s Battery management s High speed switch s Logic level translator.
4.
Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 d Simplified outline Symbol source (s) drain (d) 1 Top view 2 MSB003 g s MBB076 SOT23 Philips Semiconductors BSH111 N-channel enhancement mode field-effect transistor 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = 4.
5 V Tsp = 25 °C VGS = 4.
5 V; ID = 500 mA VGS = 2.
5 V; ID = 75 mA VGS = 1.
8 V; ID = 75 mA Typ 2.
3 2.
4 3.
1 Max 55 335 0.
83 150 4.
0 5.
0 8.
0 Unit V mA W °C Ω Ω Ω drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) Tsp = 25 °C; VGS = 4.
5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.
5 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 °C Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −65 −65 Max 55 55 ±10 335 212 1.
3 0.
83 +150 +150 335 1.
3 Unit V V V mA mA A W °C °C mA A Source-drain diode 9397 750 09629 © Koninklijke Philips Electronics ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)