*
an AMP company
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--E-= -=----
.
-----= -
E
RF
MOSFET 2 - 175 MHz
Features
Power Transistor,
6OW, 28V
DU2860T
v2.
00
-*-
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
.
.
Absolute Maximum Ratings at 25°C
Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America:
CISS Coss CRSS GP % VSWR-T
Change WAhout Notice.
135 120
24 13 -
pF pF pF dB % -
V,,=28.
0 V, F=l .
OMHz V,,=28.
0 V, F=l .
OMHz V,,=28.
0 V, F=l .
OMHz V,,=28.
0 V, I,,=300 mA, P,,=60.
0 V,,=28.
0 V, I,,=300 mA, P,,=60.
0 W, ...