FDFMA2P857 Integrated P-Channel PowerTrench®
MOSFET and Schottky Diode
February 2007
FDFMA2P857
Integrated P-Channel PowerTrench®
MOSFET and Schottky Diode
–20V, –3.
0A, 120mΩ Features
MOSFET:
Max rDS(on) = 120mΩ at VGS = –4.
5V, ID = –3.
0A Max rDS(on) = 160mΩ at VGS = –2.
5V, ID = –2.
5A Max rDS(on) = 240mΩ at VGS = –1.
8V, ID = –1.
0A
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.
It features a
MOSFET with low on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exce...