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FDFMA2P853

Fairchild Semiconductor
Part Number FDFMA2P853
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published Oct 19, 2006
Detailed Description FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P853 July 2014 Integrated P-Channel Powe...
Datasheet PDF File FDFMA2P853 PDF File

FDFMA2P853
FDFMA2P853

Overview
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P853 July 2014 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.
It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physlicsaize and is well suited to linear mode applications.
Features MOSFET: „ -3.
0 A, -20V.
RDS(ON) = 120 m: @ VGS = -4.
5 V RDS(ON) = 160 m: @ VGS = -2.
5 V RDS(ON) = 240 m: @ VGS = -1.
8 V Schottky: VF < 0.
46 V @ 500 mA „ Low Profile - 0.
8 mm maximun - in the new package MicroFET 2x2 mm „ RoHS Compliant A NC D C D A1 NC 2 D3 MicroFET C G S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed (Note 1a) VRRM IO PD Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation for Single Operation Power dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RTJA RTJA RTJA RTJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) Package Marking and Ordering Information Device Marking .
853 Device FDFMA2P853 Reel Size 7inch Tape Width 8mm ©2008 Fairchild Semiconductor Corporation 1 6C 5G 4S Ratings -20 r8 -3.
0 -6 30 1 1.
4 0.
7 -55 to +150 Units V V A V A W oC 86 173 oC/W 86 140 Quantity 3000 units FDFMA2P853 Rev.
D3 (W) FDFMA2P853 Integrated P-Channel PowerTrench“ MOSFET and Schottky Diode Electrical Characteri...


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