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FDFMA2P859T

Fairchild Semiconductor
Part Number FDFMA2P859T
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published Dec 17, 2009
Detailed Description FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T –20 V, –3.0 A, 120 m: Features MOSF...
Datasheet PDF File FDFMA2P859T PDF File

FDFMA2P859T
FDFMA2P859T

Overview
FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T –20 V, –3.
0 A, 120 m: Features MOSFET: „ Max rDS(on) = 120 m: at VGS = –4.
5 V, ID = –3.
0 A „ Max rDS(on) = 160 m: at VGS = –2.
5 V, ID = –2.
5 A „ Max rDS(on) = 240 m: at VGS = –1.
8 V, ID = –1.
0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.
It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Schottky: „ VF < 0.
54 V @ 1 A „ Low profile - 0.
55 mm maximum - in the new package MicroFET 2x2 Thin „ Free from halogenated compounds and antimony oxides „ RoHS compliant Pin 1 A NC D A 1 NC 2 D 3 C MicroFET 2x2 Thin G S 6 C 5 G 4 S MOSFET www.
DataSheet4U.
com Symbol VDSS VGSS ID PD TJ, TSTG VRRM IO Maximum Ratings TA = 25 °C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±8 –3 –6 1.
4 0.
7 –55 to +150 30 1 Units V V A W °C V A Thermal Characteristics RTJA RTJA RTJA RTJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 °C/W Package Marking and Ordering Information Device Marking 59 Device FDFMA2P859T Package MicroFET 2x2 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.
fairchildsemi.
com ©2009 Fairchild Semiconductor Corpora...


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