Data Sheet
HGTG40N60B3
November 2004
File Number
70A, 600V, UFS Series N-Channel IGBT
The HGTG40N60B3 is a MOS gated high
voltage switching device combining the best features of
MOSFETs and bipolar transistors.
The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state
voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high
voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49052.
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