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HGTG40N60B3

ON Semiconductor
Part Number HGTG40N60B3
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Oct 3, 2022
Detailed Description UFS Series N-Channel IGBT 70 A, 600 V HGTG40N60B3 The HGTG40N60B3 is a MOS gated high voltage switching device combining...
Datasheet PDF File HGTG40N60B3 PDF File

HGTG40N60B3
HGTG40N60B3

Overview
UFS Series N-Channel IGBT 70 A, 600 V HGTG40N60B3 The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The much lower on−state voltage drop varies only moderately between 25°C and 150°C.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49052.
Features • 70 A, 600 V, TC = 25°C • 600 V Switching SOA Capability • Typical Fall Time: 100 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Packing www.
onsemi.
com C G E TO−247−3LD CASE 340CK MARKING DIAGRAMS Figure 1.
$Y&Z&3&K G40N60B3 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot G40N60B3 = Specific Device Code ORDERING INFORMATION Part Number HGTG40N60B3 Package TO−24 Brand G40N60B3 © Semiconductor Components Industries, LLC, 2004 1 April, 2020 − Rev.
4 Publication Order Number: HGTG40N60B3/D HGTG40N60B3 ABSOLUTE MAXIMUM RATINGS TC = 25°C Unless Otherwise Specified Description Symbol Ratings Units Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 70 A IC110 40 Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous ICM 330 A VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TJ = 150°C, Figure 3 SSOA 100 A at 600 V Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C PD 290 W 2.
33 W/°C Reverse Voltage Avalanche Energy EARV 100 mJ Operating and Storage Junction Temperature Range TJ, TSTG −55 to 150 °C Maximum Lead Tempe...


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