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HGTG40N60B3

Part Number	HGTG40N60B3
Manufacturer	Harris
Description	UFS Series N-Channel IGBT
Published	Oct 5, 2014
Detailed Description	S E M I C O N D U C T O R HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT Package JEDEC STYLE TO-247 E C G PRELIMINAR...
Datasheet	HGTG40N60B3 PDF File

Overview

S E M I C O N D U C T O R HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT Package JEDEC STYLE TO-247 E C G PRELIMINARY May 1995 Features • 70A, 600V at TC = +25 C • Square Switching SOA Capability • Typical Fall Time - 160ns at +150oC • Short Circuit Rating • Low Conduction Loss o Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTG40N60B3 PACKAGE TO-247 BRAND G40N60B3 E Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49052 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed HGTG40N60B3 600 600 70 40 330 ±20 ±30 160A at 0.
8 BVCES 290 2.
33 -40 to +150 260 2 10 UNITS V V A A A V V W W/oC oC oC µs µs Collector-Emitter Voltage .
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BVCES Collector-Gate Voltage, RGE = 1MΩ.
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BVCGR Collector Current Continuous At TC = +25oC (Package Limited) .
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IC25 At TC = +110oC .
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IC110 Collector Current Pulsed (Note 1) .
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ICM Gate-Emitter Voltage Continuous.
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VGES Gat...

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