l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance
l P-Channel
MOSFET l One-third Footprint of SOT-23 l Super Low Profile (.
8mm) l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930F
IRF6100
HEXFET® Power
MOSFET
RDS(on) max
0.
065Ω@VGS = -4.
5V
0.
095Ω@VGS = -2.
5V
ID
-5.
1A
-4.
1A
Description
True chip-scale packaging is available from International Rectifier.
Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications.
These benefits, combined with the ruggedized device design , that International Rectifier...