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IRF610A

Fairchild Semiconductor
Part Number IRF610A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jul 2, 2007
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRF610A PDF File

IRF610A
IRF610A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 1.
169 Ω (Typ.
) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.
5 Ω ID = 3.
3 A TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM www.
DataSheet4U.
com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) ) Continuous Drain Current (TC=100 oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o Value 200 3.
3 2.
1 10 + _ 30 44 3.
3 3.
8 5.
0 38 0.
31 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o VGS EAS IAR EAR dv/dt PD TJ , TSTG TL O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R θJC Rθ CS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -Max.
3.
28 -62.
5 o Units C/W Rev.
B ©1999 Fairchild Semiconductor Corporation IRF610A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller”) Charge Min.
Typ.
Max.
Units 200 -2.
0 -----------------0.
23 ------1.
31 160 35 14 10 10 20 12 7 1.
5 3.
5 --4.
0 100 -100 10 100 1.
5 -210 44 18 30 30 50 35 10 --nC ns pF µA Ω Ω N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless...


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