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IRF610B

Fairchild Semiconductor
Part Number IRF610B
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Apr 16, 2005
Detailed Description IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power fiel...
Datasheet PDF File IRF610B PDF File

IRF610B
IRF610B

Overview
IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features • • • • • • 3.
3A, 200V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 7.
2 nC) Low Crss ( typical 6.
8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF610B 200 3.
3 2.
1 10 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS610B 3.
3 * 2.
1 * 10 * 40 3.
3 3.
8 5.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 38 0.
31 -55 to +150 300 22 0.
18 * Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF610B 3.
28 0.
5 62.
5 IRFS610B 5.
71 -62.
5 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev.
A1, December 2002 IRF610B/IRFS610B Electrical Characteristics Symbol Parameter TC = 25°C unless ...


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