PD - 9.
1560A
PRELIMINARY
l l l l l l
IRF9953
HEXFET® Power
MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel
MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS = -30V RDS(on) = 0.
25Ω
3 4
6
5
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The...