PD - 94452
HEXFET® Power
MOSFET
l
IRFR3418 IRFU3418
ID
30A
Applications High frequency DC-DC converters
VDSS
80V
RDS(on) Max
14m:
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche
Voltage and Current
l
D-Pak IRFR3418
I-Pak IRFU3418
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
80 ± 20 70 50 280 140 3.
8 0.
95 5.
2 -55 to + 175
...