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IRFR3412

International Rectifier
Part Number IRFR3412
Manufacturer International Rectifier
Description SMPS MOSFET
Published Sep 27, 2005
Detailed Description PD - 94373 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltag...
Datasheet PDF File IRFR3412 PDF File

IRFR3412
IRFR3412

Overview
PD - 94373 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability l IRFR3412 IRFU3412 HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.
025Ω ID 48A† D-Pak IRFR3412 I-Pak IRFU3412 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 second Mounting torqe, 6-32 or M3 screw Max.
48† 34† 190 140 0.
95 ± 20 6.
4 -55 to + 175 300(1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min.
Typ.
Max.
Units ––– ––– ––– ––– 48† 190 A ––– ––– 1.
3 V „ ––– 68 100 ns ––– 160 240 nC ––– 4.
5 6.
8 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions MOSFET symbol showing the G integral reverse p-n junction diode.
TJ = 25°C, IS = 29A, VGS = 0V TJ = 125°C, IF = 29A di/dt = 100A/µs „ D S www.
irf.
com 1 1/22/02 IRFR/U3412 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
100 ––– ––– 3.
5 ––– ––– ––– ––– Typ.
––– ...


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