JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD112
TRANSISTOR (NPN)
yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications
TO-251-3L
1.
BASE 2.
COLLECTOR 3.
EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base
Voltage
100 V
VCEO
Collector-Emitter
Voltage
100 V
VEBO
Emitter-Base
Voltage
5V
IC Collector Current -Continuous
2A
PC Collector Power Dissipation
1W
RθJC
Thermal resistance, junction to case
6.
25 ℃/W
RθJA
Thermal resistance, junction to Ambient
71.
4 ℃/W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELE...