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MJD112

Inchange Semiconductor
Part Number MJD112
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 8, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead for...
Datasheet PDF File MJD112 PDF File

MJD112
MJD112

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range 100 V 100 V 5 V 2 A 4 A 50 mA 1.
75 W 20 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.
25 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat)* Base-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(on)* Base-Emitter On Voltage IC= 2A; VCE= 3V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1* DC Current Gain IC= 0.
5A; VCE= 3V hFE-2* DC Current Gain IC= 2A; VCE= 3V hFE-3* DC Current Gain IC= 4A; VCE=3V COB Output Capacitance IE= 0; VCB= 10V; f= 1.
0MHz fT Current-Gain—Bandwidth Product *:Pulse test PW≤300us,duty cycle≤2% IC= 0.
75A; VCE= 10V MIN TYP.
MAX UNIT 2.
0 V 3.
0 V 4.
0 V 2.
8 V 100 V 10 uA 2 mA 500 1K 12K 200 100 pF 25 ...


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