isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD3055
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.
1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
70
V
VCEO Collector-Emitter
Voltage
60
V
VEBO
Emitter-base
Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
6
A
Collector Power Dissipation@TC=25℃...