DatasheetsPDF.com

MJD3055

ST Microelectronics
Part Number MJD3055
Manufacturer ST Microelectronics
Description Complementary Silicon Power Transistors
Published May 7, 2005
Detailed Description MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 ...
Datasheet PDF File MJD3055 PDF File

MJD3055
MJD3055

Overview
MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs.
They are manufactured using Epitaxial Base technology for cost-effective performance.
3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max.
Operating Junction Temperature For PNP type voltage and current values are negative.
February 2002 NPN PNP Value MJD3055 MJD2955 70 60 5 10 6 20 -65 to 150 150 Unit V V V A A W oC oC 1/6 MJD2955 / MJD3055 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 6.
25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX ICBO Collector Cut-off VCE = 70 V Current (VBE = -1.
5 V) VCE = 70 V Collector Cut-off Current (IE = 0) VCB = 70 V VCB = 70 V Tj = 150 oC Tj = 150 oC ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VBE(on)∗ Base-Emitter Voltage hFE∗ DC Current Gain VCE = 30 V VEB = 5 V IC = 30 mA IC = 4 A IC = 10 A IC = 4 A IC = 4 A IC = 10 A IB = 0.
4 A IB = 3.
3 A VCE = 4 V VCE = 4 V VCE = 4 V fT Transition Frequency IC = 0.
5 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.
5 % For PNP type voltage and current values are negative.
VCE = 10 V f = 500 KHz Min.
60 20 5 2 Typ.
Max.
20 2 20 2 50 0.
5 1.
1 8 1.
8 100 Unit µA mA µA mA µA mA V V V V MHz Saf...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)