MMBT8050W
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
com
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter
Voltage Collector Base
Voltage Emitter Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC Ptot Tj TS Value 25 40 6 600 200 150 - 55 to + 150 Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Collector Saturation
Voltage at IC = 500 mA, IB = 50 mA Base Saturation
Voltage at IC = 500 mA, IB = 50 mA Collector Emitter Breakdown ...