DatasheetsPDF.com

MMBT8050D

SEMTECH ELECTRONICS
Part Number MMBT8050D
Manufacturer SEMTECH ELECTRONICS
Description (MMBT8050C/D) NPN Silicon Epitaxial Planar Transistor
Published Aug 20, 2010
Detailed Description MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary...
Datasheet PDF File MMBT8050D PDF File

MMBT8050D
MMBT8050D

Overview
MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications.
As complementary type the PNP transistor MMBT8550C and MMBT8550D are recommended.
www.
DataSheet4U.
com SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 OC) Symbol Value 25 40 6 600 200 150 -55 to +150 Unit V V V mA mW O Collector Emitter Voltage C o ll e ct o r B as e V o lt a g e Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCEO VCBO VEBO IC Ptot Tj TS C C O РАДИОТЕХ-ТРЕЙД ® Тел.
: (495) 795-0805 Факс: (495) 234-1603 Эл.
почта: info@rct.
ru Веб: www.
rct.
ru MMBT8050C / MMBT8050D Characteristics at Ta =25 OC Symbol DC Current Gain at VCE=1V, IC=100mA at VCE=1V, IC=500mA Collector Cutoff Current at VCB=35V Collector Saturation Voltage at IC=500mA, IB=50mA Base Saturation Voltage at IC=500mA, IB=50mA Collector Emitter Breakdown Voltage at IC=2mA Collector Base Breakdown Voltage at IC=10µA Emitter Base Breakdown Voltage at IE=100µA Gain Bandwidth Product at VCE=5V, IC=10mA, f=50MHz Collector Base Capacitance at VCB=10V, f=1MHz Thermal Resistance Junction to Ambient CCBO RthA 12 fT 100 V(BR)EBO 6 V(BR)CBO 40 V(BR)CEO 25 VBE(sat) VCE(sat) MMBT8050C MMBT8050D hFE hFE hFE ICBO 100 160 40 Min.
Typ.
www.
DataSheet4U.
com Max.
250 400 100 0.
5 1.
2 200 Unit nA V V V V V MHz pF K/W SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005 MMBT8050C / MMBT8050D Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2mm from case www.
DataSheet4U.
com Collector current versus base emitter voltage W 1 mA 3 10 5 25 C -50 C 150 o C typical limits at Tamb=25 C o o 0.
8 2 10 2 5 Ptot 0.
6 IC 2 10 0.
4 1 5 2 5 2 0.
2 0 0 100 200 oC Tamb 10 -1 0 1 2V VBE Pulse thermal resistance versus pulse duration Valid prov...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)