MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF
MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications at frequencies to 1.
0 GHz.
The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
• Guaranteed Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 11.
5 dB Efficiency – 33% IMD – 28 dBc • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stabil...