MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron
MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.
1125 GHz, f2 = 2.
1225 GHz, Channel bandwidth = 3.
84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.
84 MHz bandwidth.
Peak/Avg = 8.
5 dB @ 0.
01% probability on...